ONTOS7 Atmospheric Plasma System

The ONTOS plasma tool is an atmospheric plasma system for surface preparation. It is not meant for etch but to clear oxidation/ contamination on surface/ top layer of a substrate. The tools advantage is its high yield, high-speed, chip-to-chip interconnect bonds at room temperature with minimal force. This provides better surface activation for direct bonding, aqueous wetting, contamination removal, and adhesive bonding. The tools advantage is that it does not cause plasma damage to the substrate as there is not direct exposure to hot electrons, ions, or high kinetic energy bombardment. Atomic layers are modified by activated gas-phase chemical reactions, not blasting the surface with reactive ions. It eliminates the possibility of back-sputtering of unwanted metals from vacuum chamber components onto the substrate being treated, eliminates the introduction of particles from vacuum chamber walls as well as eliminating the possibility of re-deposition of etch products back onto the substrate being treated.

The tool is capable of chip/wafer is scanned under compact process head. Its process runs in ambient room temperature with a typical scan rate of 1-5 mm/sec, with power to internal plasma source of 60-100 Watts and with a vacuum chuck that can handle small chips to 8” wafers. The Ontos7 Atmospheric Plasma system uses a continuous flow of process gas in a small reaction zone to ensure zero Oxygen in the reaction zone.